288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D1.fm - Rev N 5/08 EN 1 ©2003 Micron Technology, Inc. All rights reserved. CIO RLDRAM® II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks

Features • 400 MHz DDR operation (800 Mb/s/pin data rate) • 28.8 Gb/s peak bandwidth (x36 at 400 MHz clock frequency) • Organization – 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 • 8 internal banks for concurrent operation and maximum bandwidth • Reduced cycle time (20ns at 400 MHz) • Nonmultiplexed addresses (address multiplexing option available) • SRAM-type interface • Programmable READ latency (RL), row cycle time, and burst sequence length • Balanced READ and WRITE latencies in order to optimize data bus utilization • Data mask for WRITE commands • Differential input clocks (CK, CK#) • Differential input data clocks (DKx, DKx#) • On-die DLL generates CK edge-aligned data and output data clock signals • Data valid signal (QVLD) • 32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms) • 144-ball μBGA package • HSTL I/O (1.5V or 1.8V nominal) • 25–60Ω matched impedance outputs • 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O • On-die termination (ODT) RTT

Figure 1: 144-Ball μBGA Notes: 1. Contact Micron for availability of industrial temperature products. 2. Contact Micron for availability of Pb-free products. 3. The FBGA package is being phased out. Options Marking • Clock cycle timing – 2.5ns (400 MHz) -25 – 3.3ns (300 MHz) -33 – 5ns (200 MHz) -5 • Configuration – 32 Meg x 9 32M9 – 16 Meg x 18 16M18 – 8 Meg x 36 8M36 • Operating temperature – Commercial (0° to +95°C) None – Industrial (TC = –40°C to +95°C; TA = –40°C to +85°C) IT1 • Package – 144-ball μBGA FM1 – 144-ball μBGA (Pb-free) BM2 – 144-ball FBGA HU3 – 144-ball FBGA (Pb-free) HT2, 3

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D1.fm - Rev N 5/08 EN 2 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features Figure 2: 288Mb RLDRAM II CIO Part Numbers Notes: 1. The FBGA package is being phased out. BGA Part Marking Decoder Due to space limitations, BGA-packaged components have an abbreviated part marking that is different from the part number. Micron’s BGA Part Marking Decoder is available on Micron’s Web site at micron.com. Package

144-ball μBGA 144-ball μBGA (Pb-free) 144-ball FBGA 144-ball FBGA (Pb-free) FM BM HU1 HT1 Example Part Number: MT49H16M18FM-25 tCK = 2.5ns tCK = 3.3ns tCK = 5ns Speed Grade -25 -33 -5 - MT49H Configuration I/O Package Speed Temp Temperature Commercial Industrial None IT I/O Common Separate None C Configuration 32 Meg x 9 16 Meg x 18 8 Meg x 36 32M9 16M18 8M36 PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_CIOTOC.fm - Rev N 5/08 EN 3 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Table of Contents Table of Contents

BGA Part Marking Decoder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
State Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Ball Assignments and Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Electrical Specifications – IDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Electrical Specifications – AC and DC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
AC and DC Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Input Slew Rate Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Temperature and Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
MODE REGISTER SET (MRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
READ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
AUTO REFRESH (AREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39
Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
INITIALIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
READ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48
AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
On-Die Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55
Multiplexed Address Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
IEEE 1149.1 Serial Boundary Scan (JTAG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66
Disabling the JTAG Feature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66
Test Access Port (TAP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66
TAP Controller. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
Performing a TAP RESET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .69
TAP Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .69
TAP Instruction Set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_CIOLOF.fm - Rev N 5/08 EN 4 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II List of Figures List of Figures

DC internet marketing

hemorrhoid treatment

jobs in haiti

haiti jobs

omega 3

internet marketing

selling gold

custom home builders Virginia

data recovery from crashed hard drive

Indemnity insurance

hcg diet

high pr backlinks

seo rank

Massage Arlington VA, 

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_CIOLOT.fm - Rev N 5/08 EN 5 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II

Lisf of Tables Lisf of Tables Table 1: 64 Meg x 9 Ball Assignments (Top View) 144-Ball FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Table 2: 32 Meg x 18 Ball Assignments (Top View) 144-Ball FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Table 3: 16 Meg x 36 Ball Assignments (Top View) 144-Ball FBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Table 4: Ball Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Table 5: IDD Operating Conditions and Maximum Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 6: Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Table 7: DC Electrical Characteristics and Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Table 8: Input AC Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Table 9: Differential Input Clock Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Table 10: Address and Command Setup and Hold Derating Values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Table 11: Data Setup and Hold Derating Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Table 12: Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Table 13: AC Electrical Characteristics: -18, -25E, -25, -33 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Table 14: Temperature Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Table 15: Thermal Impedance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Table 16: Description of Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Table 17: Command Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Table 18: Cycle Time and READ/WRITE Latency Configuration Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
Table 19: Address Widths at Different Burst Lengths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Table 20: On-Die Termination DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Table 21: 576Mb Address Mapping in Multiplexed Address Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60
Table 22: Cycle Time and READ/WRITE Latency Configuration Table in Multiplexed Mode . . . . . . . . . . . . . .61
Table 23: TAP Input AC Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72
Table 24: TAP AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72
Table 25: TAP DC Electrical Characteristics and Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
Table 26: Identification Register Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
Table 27: Scan Register Sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
Table 28: Instruction Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74
Table 29: Boundary Scan (Exit) Order . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 6 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II General Description General Description The Micron® reduced latency DRAM (RLDRAM®) II is a high-speed memory device designed for high bandwidth data storage—telecommunications, networking, and cache applications, etc. The chip’s 8-bank architecture is optimized for sustainable high speed operation. The DDR I/O interface transfers two data words per clock cycle at the I/O balls. Output data is referenced to the free-running output data clock. Commands, addresses, and control signals are registered at every positive edge of the differential input clock, while input data is registered at both positive and negative edges of the input data clock(s). Read and write accesses to the RLDRAM are burst-oriented. The burst length (BL) is programmable from 2, 4, or 8 by setting the mode register. The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output drivers.

Bank-scheduled refresh is supported with the row address generated internally. The μBGA 144-ball package is used to enable ultra high-speed data transfer rates and a simple upgrade path from early generation devices. PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 7 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II State Diagram State Diagram

Figure 3: Simplified State Diagram Initialization sequence DSEL/NOP WRITE READ MRS AREF Automatic sequence Command sequence PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N EN 8 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II State Diagram

Functional Block Diagrams Figure 4: 32 Meg x 9 Functional Block Diagram Notes: 1. Examples for BL = 2; column address will be reduced with an increase in burst length. 2. The “16” = (length of burst) x 2^(number of column addresses to WRITE FIFO and READ logic). 13 WE# CK# CS# REF# CK 8 A0–A201 BA0–BA2 ZQ 24 32
I/O gating DQM mask logic Column decoder Bank 0 memory array (8,192 x 32 x 16 x 9)2 8,192
Bank control logic Bank 1 Bank 0 Bank 2 Bank 3 Bank 4 Bank 6 Bank 5 Bank 7 13 81 3 8 8
Refresh counter 13 18 Mode register Control logic Command decode Rowaddress MUX Address register Columnaddress counter/ latch 81 144 READ logic WRITE FIFO and drivers CLK in
144 144 n n 9 9 9 2 2 9
DQ latch QK/QK# generator Drivers DLL CK/CK# RCVRS Input logic (0 ....8) VTT RTT ODT control ODT control VTT RTT ODT control DQ0–DQ8 QK0/QK0# QVLD DK/DK# DM ZQ CAL Output drivers ZQ CAL 5 31 31 SSeEnNsSeE a AmMpPliLfiIeFIrEsRS 8,192 n n 9 9 Bank 0 rowaddress latch and decoder

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N EN 9 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II State Diagram Figure 5: 16 Meg x 18 Functional Block Diagram

Notes: 1. Examples for BL = 2; column address will be reduced with an increase in burst length. 2. The “8” = (length of burst) x 2^(number of column addresses to WRITE FIFO and READ logic). 13 WE# CK# CS# REF# CK 8 A0–A191 BA0–BA2 ZQ 23 32 I/O gating DQM mask logic Column decoder Bank 0 memory array (8,192 x 32 x 8 x 18)2 8,192 Bank control logic Bank 1 Bank 0 Bank 2 Bank 3 Bank 4 Bank 6 Bank 5 Bank 7 13 71 3 8 8 Refresh counter 13 18
Mode register Control logic Command decode Rowaddress MUX Address register Columnaddress counter/ latch 71 144 READ logic WRITE FIFO and drivers 144 144 n n 18 18 18 4 2 18 DQ latch QK/QK# generator Drivers DLL CK/CK# RCVRS Input logic (0 ....17) VTT RTT ODT control ODT control VTT RTT ODT control DQ0–DQ17 QK0–QK1/ QK0#–QK1# QVLD DK/DK# DM ZQ CAL Output drivers ZQ CAL 5 21 21 SSeEnNsSeE a AmMpPliLfiIeFIrEsRS 8,192 n n 18 18 CLK in Bank 0 rowaddress latch and decoder

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N EN 10 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II State Diagram Figure 6: 8 Meg x 36 Functional Block Diagram

Notes: 1. Examples for BL = 2; column address will be reduced with an increase in burst length. 2. The “4” = (length of burst) x 2^(number of column addresses to WRITE FIFO and READ logic).
13 WE# CK# CS# REF# CK 8 A0–A181 BA0–BA2 ZQ 22 32
I/O gating DQM mask logic Column decoder Bank 0 memory array (8,192 x 32 x 4 x 36)2 8,192 Bank control logic Bank 1 Bank 0 Bank 2 Bank 3 Bank 4 Bank 6 Bank 5 Bank 7 13 61 3 8 8
Refresh counter 13 18 Mode register Control logic Command decode Rowaddress MUX Address register Columnaddress counter/ latch 61 144 READ logic WRITE FIFO and drivers 144 144 n n 36 36 36 4 4 36 DQ
latch QK/QK# generator Drivers DLL CK/CK# RCVRS Input logic (0 ....35) VTT RTT ODT control ODT control VTT RTT ODT control DQ0–DQ35 QK0–QK1/ QK0#–QK1# QVLD DK0–DK1/ DK0#–DK1# DM ZQ CAL Output drivers ZQ CAL 5 11 11 SSEeNnsSeE aAmMpPliLfIiFeIrEsRS 8,192 n n 36 36 CLK in Bank 0 rowaddress latch and decoder

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 11 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Ball Assignments and Descriptions Ball Assignments and Descriptions Notes: 1. Reserved for future use. This signal is not connected. 2. Reserved for future use. This signal is internally connected and has parasitic characteristics of an address input signal. 3. No function. This signal is internally connected and has parasitic characteristics of a clock input signal. This may optionally be connected to GND. 4. Do not use. This signal is internally connected and has parasitic characteristics of a I/O. This may optionally be connected to GND. Note that if ODT is enabled, these pins will be connected to VTT.

Table 1: 32 Meg x 9 Ball Assignments (Top View) 144-Ball μBGA 1 2 3 4 5 6 7 8 9 10 11 12
A VREF VSS VEXT VSS VSS VEXT TMS TCK
B VDD DNU4 DNU4 VSSQ VSSQ DQ0 DNU4 VDD
C VTT DNU4 DNU4 VDDQ VDDQ DQ1 DNU4 VTT
D A221 DNU4 DNU4 VSSQ VSSQ QK0# QK0 VSS
E A212 DNU4 DNU4 VDDQ VDDQ DQ2 DNU4 A20
F A5 DNU4 DNU4 VSSQ VSSQ DQ3 DNU4 QVLD
G A8 A6 A7 VDD VDD A2 A1 A0
H B2 A9 VSS VSS VSS VSS A4 A3
J NF3 NF3 VDD VDD VDD VDD B0 CK
K DK DK# VDD VDD VDD VDD B1 CK#
L REF# CS# VSS VSS VSS VSS A14 A13
M WE# A16 A17 VDD VDD A12 A11 A10
N A18 DNU4 DNU4 VSSQ VSSQ DQ4 DNU4 A19
P A15 DNU4 DNU4 VDDQ VDDQ DQ5 DNU4 DM
R VSS DNU4 DNU4 VSSQ VSSQ DQ6 DNU4 VSS
T VTT DNU4 DNU4 VDDQ VDDQ DQ7 DNU4 VTT
U VDD DNU4 DNU4 VSSQ VSSQ DQ8 DNU4 VDD
V VREF ZQ VEXT VSS VSS VEXT TDO TDI
PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 12 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Ball Assignments and Descriptions Notes: 1. Reserved for future use. This may optionally be connected to GND. 2. Reserved for future use. This signal is internally connected and has parasitic characteristics of an address input signal. This may optionally be connected to GND. 3. No function. This signal is internally connected and has parasitic characteristics of a clock input signal. This may optionally be connected to GND. 4. Do not use. This signal is internally connected and has parasitic characteristics of a I/O. This may optionally be connected to GND. Note that if ODT is enabled, these pins will be connected to VTT.

Table 2: 16 Meg x 18 Ball Assignments (Top View) 144-Ball μBGA 1 2 3 4 5 6 7 8 9 10 11 12
A VREF VSS VEXT VSS VSS VEXT TMS TCK
B VDD DNU4 DQ4 VSSQ VSSQ DQ0 DNU4 VDD
C VTT DNU4 DQ5 VDDQ VDDQ DQ1 DNU4 VTT
D A221 DNU4 DQ6 VSSQ VSSQ QK0# QK0 VSS
E A212 DNU4 DQ7 VDDQ VDDQ DQ2 DNU4 A202
F A5 DNU4 DQ8 VSSQ VSSQ DQ3 DNU4 QVLD
G A8 A6 A7 VDD VDD A2 A1 A0
H B2 A9 VSS VSS VSS VSS A4 A3
J NF3 NF3 VDD VDD VDD VDD B0 CK
K DK DK# VDD VDD VDD VDD B1 CK#
L REF# CS# VSS VSS VSS VSS A14 A13
M WE# A16 A17 VDD VDD A12 A11 A10
N A18 DNU4 DQ14 VSSQ VSSQ DQ9 DNU4 A19
P A15 DNU4 DQ15 VDDQ VDDQ DQ10 DNU4 DM
R VSS QK1 QK1# VSSQ VSSQ DQ11 DNU4 VSS
T VTT DNU4 DQ16 VDDQ VDDQ DQ12 DNU4 VTT
U VDD DNU4 DQ17 VSSQ VSSQ DQ13 DNU4 VDD
V VREF ZQ VEXT VSS VSS VEXT TDO TDI
PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 13 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Ball Assignments and Descriptions Notes: 1. Reserved for future use. This may optionally be connected to GND. 2. Reserved for future use. This signal is internally connected and has parasitic characteristics of an address input signal. This may optionally be connected to GND.

Table 3: 8 Meg x 36 Ball Assignments (Top View) 144-Ball μBGA 1 2 3 4 5 6 7 8 9 10 11 12
A VREF VSS VEXT VSS VSS VEXT TMS TCK
B VDD DQ8 DQ9 VSSQ VSSQ DQ1 DQ0 VDD
C VTT DQ10 DQ11 VDDQ VDDQ DQ3 DQ2 VTT
D A22 DQ12 DQ13 VSSQ VSSQ QK0# QK0 VSS
E A212 DQ14 DQ15 VDDQ VDDQ DQ5 DQ4 A202
F A5 DQ16 DQ17 VSSQ VSSQ DQ7 DQ6 QVLD
G A8 A6 A7 VDD VDD A2 A1 A0
H B2 A9 VSS VSS VSS VSS A4 A3
J DK0 DK0# VDD VDD VDD VDD B0 CK
K DK1 DK1# VDD VDD VDD VDD B1 CK#
L REF# CS# VSS VSS VSS VSS A14 A13
M WE# A16 A17 VDD VDD A12 A11 A10
N A18 DQ24 DQ25 VSSQ VSSQ DQ35 DQ34 A192
P A15 DQ22 DQ23 VDDQ VDDQ DQ33 DQ32 DM
R VSS QK1 QK1# VSSQ VSSQ DQ31 DQ30 VSS
T VTT DQ20 DQ21 VDDQ VDDQ DQ29 DQ28 VTT
U VDD DQ18 DQ19 VSSQ VSSQ DQ27 DQ26 VDD
V VREF ZQ VEXT VSS VSS VEXT TDO TDI

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 14 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Ball Assignments and Descriptions Table 4: Ball Descriptions Symbol Type Description A0–A20 Input Address inputs: A0–A20 define the row and column addresses for READ and WRITE operations. During a MODE REGISTER SET, the address inputs define the register settings. They are sampled at the rising edge of CK. BA0–BA2 Input Bank address inputs: Select to which internal bank a command is being applied. CK, CK# Input Input clock: CK and CK# are differential input clocks. Addresses and commands are latched on the rising edge of CK. CK# is ideally 180 degrees out of phase with CK. CS# Input Chip select: CS# enables the command decoder when LOW and disables it when HIGH. When the command decoder is disabled, new commands are ignored, but internal operations continue. DQ0–DQ35 Input Data input: The DQ signals form the 36-bit data bus. During READ commands, the data is referenced to both edges of QKx. During WRITE commands, the data is sampled at both edges of DK. DK, DK# Input Input data clock: DK and DK# are the differential input data clocks. All input data is referenced to both edges of DK. DK# is ideally 180 degrees out of phase with DK. For the x36 device, DQ0– DQ17 are referenced to DK0 and DK0# and DQ18–DQ35 are referenced to DK1 and DK1#. For the x9 and x18 devices, all DQs are referenced to DK and DK#. All DKx and DKx# pins must always be supplied to the device. DM Input Input data mask: The DM signal is the input mask signal for WRITE data. Input data is masked when DM is sampled HIGH. DM is sampled on both edges of DK (DK1 for the x36 configuration). Tie signal to ground if not used. TCK Input IEEE 1149.1 clock input: This ball must be tied to VSS if the JTAG function is not used. TMS, TDI Input IEEE 1149.1 test inputs: These balls may be left as no connects if the JTAG function is not used. WE#, REF# Input Command inputs: Sampled at the positive edge of CK, WE# and REF# define (together with CS#) the command to be executed. VREF Input Input reference voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers. ZQ I/O External impedance (25–60Ω): This signal is used to tune the device outputs to the system data bus impedance. DQ output impedance is set to 0.2 × RQ, where RQ is a resistor from this signal to ground. Connecting ZQ to GND invokes the minimum impedance mode. Connecting ZQ to VDD invokes the maximum impedance mode. Refer to Figure 16 on page 44 to activate this function. QKx, QKx# Output Output data clocks: QKx and QKx# are opposite polarity, output data clocks. They are freerunning, and during READs, are edge-aligned with data output from the RLDRAM. QKx# is ideally 180 degrees out of phase with QKx. For the x36 device, QK0 and QK0# are aligned with DQ0–DQ17, and QK1 and QK1# are aligned with DQ18–DQ35. For the x18 device, QK0 and QK0# are aligned with DQ0–DQ8, while QK1 and QK1# are aligned with Q9–Q17. For the x9 device, all DQs are aligned with QK0 and QK0#. QVLD Output Data valid: The QVLD pin indicates valid output data. QVLD is edge-aligned with QKx and QKx#. TDO Output IEEE 1149.1 test output: JTAG output. This ball may be left as no connect if the JTAG function is not used. VDD Supply Power supply: Nominally, 1.8V. See Table 12 on page 29 for range. VDDQ Supply DQ power supply: Nominally, 1.5V or 1.8V. Isolated on the device for improved noise immunity. See Table 12 on page 29 for range. VEXT Supply Power supply: Nominally, 2.5V. See Table 12 on page 29 for range. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. VTT Supply Power supply: Isolated termination supply. Nominally, VDDQ/2. See Table 12 on page 29 for range. A21 – Reserved for future use: This signal is internally connected and can be treated as an address input. A22 – Reserved for future use: This signal is not connected and can be connected to ground.

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 15 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Ball Assignments and Descriptions DNU – Do not use: These balls may be connected to ground. Note that if ODT is enabled, these pins will be connected to VTT. NF – No function: These balls can be connected to ground. Table 4: Ball Descriptions (continued) Symbol Type Description PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 16 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Package Dimensions Package Dimensions

Figure 7: 144-Ball μBGA Notes: 1. All dimensions are in millimeters. BALL A1 ID 17.90 CTR 0.44 ±0.05 0.39 ±0.05 BALL A1 BALL A1 ID 0.08 A A SEATING PLANE 10º TYP 0.08 MAX 10.70 CTR 11.00 ±0.10 4.40 5.50 ±0.05 8.80 2.41 CTR 0.80 TYP 1.00 TYP 8.50 9.25 ±0.05 17.00 15.40 18.50 ±0.10 144X Ø 0.45 DIMENSIONS APPLY TO SOLDER BALLS POST REFLOW. THE PRE-REFLOW BALL DIAMETER IS 0.50 ON A 0.40 SMD BALL PAD. BALL A12 MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE MATERIAL: PLASTIC LAMINATE SOLDER BALL MATERIAL: 62% Sn, 36% Pb, 2%Ag OR 96.5% Sn, 3%Ag, 0.5% Cu MOLD COMPOUND

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 17 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Package Dimensions Figure 8: 144-Ball FBGA Notes: 1. All dimensions are in millimeters. 2. The FBGA package is being phased out. SEATING PLANE 0.155 ±0.013 0.75 ±0.05 0.10 A A BALL A1 ID BALL A1 ID MOLD BALL A1 COMPOUND MOLD COMPOUND: EPOXY NOVOLAC SUBSTRATE MATERIAL: PLASTIC LAMINATE 1.20 MAX SOLDER BALL MATERIAL: 62% Sn, 36% Pb, 2%Ag OR 96.5% Sn, 3%Ag, 0.5%Cu 17.00 18.50 ±0.10 1.00 TYP 4.40 11.00 ±0.10 5.50 ±0.05 8.50 9.25 ±0.05 BALL A12 144X Ø 0.55 DIMENSIONS APPLY TO SOLDER BALLS POST REFLOW. THE PRE-REFLOW BALL IS Ø0.50 ON A Ø0.40 NSMD BALL PAD. C L C L 8.80 2.20 ±0.025 CTR 0.80 TYP

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 18 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – IDD Electrical Specifications – IDD Table 5: IDD Operating Conditions and Maximum Limits Description Condition Symbol -25 -33 -5 Units Standby current tCK = idle; All banks idle; No inputs toggling ISB1 (VDD) x9/x18 48 48 48 mA ISB1 (VDD) x36 48 48 48 ISB1 (VEXT) 26 26 26 Active standby current
CS# = 1; No commands; Bank address incremented and half address/data change once every 4 clock cycles ISB2 (VDD) x9/x18 288 233 189 mA ISB2 (VDD) x36 288 233 189 ISB2 (VEXT) 26 26 26 Operational current
BL = 2; Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by write sequence; continuous data during WRITE commands IDD1 (VDD) x9/x18 348 305 255 mA IDD1 (VDD) x36 374 343 292 IDD1 (VEXT) 41 36 36 Operational current
BL = 4; Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by write sequence; Continuous data during WRITE commands IDD2 (VDD) x9/x18 362 319 269 mA IDD2 (VDD) x36 418 389 339 IDD2 (VEXT) 48 42 42 Operational current
BL = 8; Sequential bank access; Bank transitions once every tRC; half address transitions once every tRC; Read followed by write sequence; continuous data during WRITE commands IDD3 (VDD) x9/x18 408 368 286 mA IDD3 (VDD) x36 n/a n/a n/a IDD3 (VEXT) 55 48 48 Burst refresh current
Eight-bank cyclic refresh; Continuous address/ data; Command bus remains in refresh for all eight banks IREF1 (VDD) x9/x18 785 615 430 mA IREF1 (VDD) x36 785 615 430 IREF1 (VEXT) 133 111 105 Distributed refresh current Single-bank refresh; Sequential bank access; Half address transitions once every tRC, continuous data IREF2 (VDD) x9/x18 325 267 221 mA IREF2 (VDD) x36 326 281 227 IREF2 (VEXT) 48 42 42 Operating burst write current example
BL = 2; Cyclic bank access; Half of address bits change every clock cycle; Continuous data; measurement is taken during continuous WRITE IDD2W (VDD) x9/x18 970 819 597 mA IDD2W (VDD) x36 990 914 676 IDD2W (VEXT) 100 90 69 Operating burst write current example
BL = 4; Cyclic bank access; Half of address bits change every 2 clock cycles; Continuous data; Measurement is taken during continuous WRITE IDD4W (VDD) x9/x18 779 609 439 mA IDD4W (VDD) X36 882 790 567 IDD4W (VEXT) 88 77 63 Operating burst write current example
BL = 8; Cyclic bank access; Half of address bits change every 4 clock cycles; continuous data; Measurement is taken during continuous WRITE IDD8W (VDD) x9/x18 668 525 364 mA IDD8W (VDD) x36 n/a n/a n/a IDD8W (VEXT) 60 51 40 Operating burst read current example
BL = 2; Cyclic bank access; Half of address bits change every clock cycle; Measurement is taken during continuous READ IDD2R (VDD) x9/x18 860 735 525 mA IDD2R (VDD) x36 880 795 565 IDD2R (VEXT) 100 90 69 Operating burst read current example
BL = 4; Cyclic bank access; Half of address bits change every 2 clock cycles; Measurement is taken during continuous READ IDD4R (VDD) x9/x18 680 525 380 mA IDD4R (VDD) x36 730 660 455 IDD4R (VEXT) 88 77 63 Operating burst read current example
BL = 8; Cyclic bank access; Half of address bits change every 4 clock cycles; Measurement is taken during continuous READ IDD8R (VDD) x9/x18 570 450 310 mA IDD8R (VDD) x36 n/a n/a n/a IDD8R (VEXT) 60 51 40

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 19 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – IDD Notes: 1. IDD specifications are tested after the device is properly initialized. +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, +2.38V ≤ VEXT ≤ +2.63V, +1.4V ≤ VDDQ ≤ VDD, VREF = VDDQ/2. 2. tCK = tDK = MIN, tRC = MIN. 3. Input slew rate is specified in Table 8 on page 19. 4. Definitions for IDD conditions: 4a. LOW is defined as VIN ≤ VIL(AC) MAX. 4b. HIGH is defined as VIN ≥ VIH(AC) MIN. 4c. Stable is defined as inputs remaining at a HIGH or LOW level. 4d. Floating is defined as inputs at VREF = VDDQ/2. 4e. Continuous data is defined as half the DQ signals changing between HIGH and LOW every half clock cycle (twice per clock). 4f. Continuous address is defined as half the address signals changing between HIGH and LOW every clock cycle (once per clock). 4g. Sequential bank access is defined as the bank address incrementing by one every tRC. 4h. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL = 2 this is every clock, for BL = 4 this is every other clock, and for BL = 8 this is every fourth clock. 5. CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transitions more than once per clock cycle. 6. IDD parameters are specified with ODT disabled. 7. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. 8. IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC).

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 20 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Electrical Specifications – AC and DC Absolute Maximum Ratings Stresses greater than those listed in Table 6 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. AC and DC Operating Conditions Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH(AC) ≤ VDD + 0.7V for t ≤ tCK/2. Undershoot: VIL(AC) ≥ –0.5V for t ≤ tCK/2. During normal operation, VDDQ must not exceed VDD. Control input signals may not have pulse widths less than tCK/2 or operate at frequencies exceeding tCK (MAX). 3. VDDQ can be set to a nominal 1.5V ± 0.1V or 1.8V ± 0.1V supply. 4. Typically the value of VREF is expected to be 0.5 x VDDQ of the transmitting device. VREF is expected to track variations in VDDQ. 5. Peak-to-peak AC noise on VREF must not exceed ±2 percent VREF(DC). 6. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed ±2 percent VDDQ/2 for DC error and an additional ±2 percent VDDQ/2 for AC noise. This measurement is to be taken at the nearest VREF bypass capacitor. Table 6: Absolute Maximum Ratings Parameter Min Max Units I/O voltage –0.3 VDDQ + 0.3 V Voltage on VEXT supply relative to VSS –0.3 +2.8 V Voltage on VDD supply relative to VSS –0.3 +2.1 V Voltage on VDDQ supply relative to VSS –0.3 +2.1 V Table 7: DC Electrical Characteristics and Operating Conditions Note 1 applies to the entire table; Unless otherwise noted: +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V Description Conditions Symbol Min Max Units Notes Supply voltage – VEXT 2.38 2.63 V Supply voltage – VDD 1.7 1.9 V 2 Isolated output buffer supply – VDDQ 1.4 VDD V 2, 3 Reference voltage – VREF 0.49 × VDDQ 0.51 × VDDQ V 4, 5, 6 Termination voltage – VTT 0.95 × VREF 1.05 × VREF V 7, 8 Input high (logic 1) voltage – VIH VREF + 0.1 VDDQ + 0.3 V 2 Input low (logic 0) voltage – VIL VSSQ - 0.3 VREF - 0.1 V 2 Output high current VOH = VDDQ/2 IOH (VDDQ/2)/ (1.15 × RQ/5) (VDDQ/2)/ (0.85 × RQ/5) A 9, 10, 11 Output low current VOL = VDDQ/2 IOL (VDDQ/2)/ (1.15 × RQ/5) (VDDQ/2)/ (0.85 × RQ/5) A 9, 10, 11 Clock input leakage current 0V ≤ VIN ≤ VDD ILC –5 5 μA Input leakage current 0V ≤ VIN ≤ VDD ILI –5 5 μA Output leakage current 0V ≤ VIN ≤ VDDQ ILO –5 5 μA Reference voltage current – IREF –5 5 μA

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 21 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC 7. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. On-die termination may be selected using mode register bit 9 (see Figure 11 on page 32). A resistance RTT from each data input signal to the nearest VTT can be enabled. RTT = 125–185Ω at 95°C TC. 9. IOH and IOL are defined as absolute values and are measured at VDDQ/2. IOH flows from the device, IOL flows into the device. 10. If MRS bit A8 is 0, use RQ = 250Ω in the equation in lieu of presence of an external impedance matched resistor. 11. For VOL and VOH, refer to the RLDRAM II HSPICE or IBIS driver models. Notes: 1. All voltages referenced to VSS (GND). 2. The AC and DC input level specifications are as defined in the HSTL standard (that is, the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [HIGH] level). 3. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). See illustration below: Table 8: Input AC Logic Levels Notes 1–3 apply to entire table; Unless otherwise noted: +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V Description Symbol Min Max Units Input high (logic 1) voltage VIH VREF + 0.2 – V Input low (logic 0) voltage VIL – VREF - 0.2 V VIH(AC) MIN VIL(AC) MAX Rise time: 2 V/ns Fall time: 2 V/ns VDDQ GND VSWING

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 22 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Notes: 1. DKx and DKx# have the same requirements as CK and CK#. 2. All voltages referenced to VSS (GND). 3. The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross. The input reference level for signals other than CK/CK# is VREF. 4. CK and CK# input slew rate must be ≥2 V/ns (≥4 V/ns if measured differentially). 5. VID is the magnitude of the difference between the input level on CK and the input level on CK#. 6. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same. Figure 9: Clock Input Notes: 1. CK and CK# must cross within this region. 2. CK and CK# must meet at least VID(DC) MIN when static and centered around VDDQ/2. 3. Minimum peak-to-peak swing. 4. It is a violation to tristate CK and CK# after the part is initialized. Table 9: Differential Input Clock Operating Conditions Notes 1–4 apply to the entire table; Unless otherwise noted: +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V Parameter/Condition Symbol Min Max Units Notes Clock input voltage level: CK and CK# VIN(DC) –0.3 VDDQ + 0.3 V Clock input differential voltage: CK and CK# VID(DC) 0.2 VDDQ + 0.6 V 5 Clock input differential voltage: CK and CK# VID(AC) 0.4 VDDQ + 0.6 V 5 Clock input crossing point voltage: CK and CK# VIX(AC) VDDQ/2 - 0.15 VDDQ/2 + 0.15 V 6 CK CK# VIN(DC) MAX 1 Maximum clock level VIN(DC) MIN Minimum clock level VDDQ/2 VDDQ/2 + 0.15 VDDQ/2 - 0.15 X X VID(AC)3 VID(DC)2 VIX(AC) MAX VIX(AC) MIN

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 23 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Input Slew Rate Derating Table 10 on page 22 and Table 11 on page 23 define the address, command, and data setup and hold derating values. These values are added to the default tAS/tCS/tDS and tAH/tCH/tDH specifications when the slew rate of any of these input signals is less than the 2 V/ns the nominal setup and hold specifications are based upon. To determine the setup and hold time needed for a given slew rate, add the tAS/tCS default specification to the “tAS/tCS VREF to CK/CK# Crossing” and the tAH/tCH default specification to the "tAH/tCH CK/CK# Crossing to VREF" derated values on Table 10. The derated data setup and hold values can be determined in a like manner using the “tDS VREF to CK/CK# Crossing” and “tDH to CK/CK# Crossing to VREF” values on Table 11. The derating values on Table 10 and Table 11 apply to all speed grades. The setup times on Table 10 and Table 11 represent a rising signal. In this case, the time from which the rising signal crosses VIH(AC) MIN to the CK/CK# cross point is static and must be maintained across all slew rates. The derated setup timing represents the point at which the rising signal crosses VREF(DC) to the CK/CK# cross point. This derated value is calculated by determining the time needed to maintain the given slew rate and the delta between VIH(AC) MIN and the CK/CK# cross point. The setup values in Table 10 and Table 11 are also valid for falling signals (with respect to VIL[AC] MAX and the CK/ CK# cross point). The hold times in Table 10 and Table 11 represent falling signals. In this case, the time from the CK/CK# cross point to when the signal crosses VIH(DC) MIN is static and must be maintained across all slew rates. The derated hold timing represents the delta between the CK/CK# cross point to when the falling signal crosses VREF(DC). This derated value is calculated by determining the time needed to maintain the given slew rate and the delta between the CK/CK# cross point and VIH(DC). The hold values in Table 10 and Table 11 are also valid for rising signals (with respect to VIL[DC] MAX and the CK and CK# cross point). Note: The above descriptions also pertain to data setup and hold derating when CK/CK# are replaced with DK/DK#. PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 24 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC

Table 10: Address and Command Setup and Hold Derating Values Command/ Address Slew Rate (V/ns) tAS/tCS VREF to CK/CK# Crossing tAS/tCS VIH(AC) MIN to CK/CK# Crossing tAH/tCH CK/CK# Crossing to VREF tAH/tCH CK/CK# Crossing to VIH(DC) MIN Units CK, CK# Differential Slew Rate: 2.0 V/ns 2.0 0 –100 0 –50 ps 1.9 5 –100 3 –50 ps 1.8 11 –100 6 –50 ps 1.7 18 –100 9 –50 ps 1.6 25 –100 13 –50 ps 1.5 33 –100 17 –50 ps 1.4 43 –100 22 –50 ps 1.3 54 –100 27 –50 ps 1.2 67 –100 34 –50 ps 1.1 82 –100 41 –50 ps 1.0 100 –100 50 –50 ps CK, CK# Differential Slew Rate: 1.5 V/ns 2.0 30 –70 30 –20 ps 1.9 35 –70 33 –20 ps 1.8 41 –70 36 –20 ps 1.7 48 –70 39 –20 ps 1.6 55 –70 43 –20 ps 1.5 63 –70 47 –20 ps 1.4 73 –70 52 –20 ps 1.3 84 –70 57 –20 ps 1.2 97 –70 64 –20 ps 1.1 112 –70 71 –20 ps 1.0 130 –70 80 –20 ps CK, CK# Differential Slew Rate: 1.0 V/ns 2.0 60 –40 60 10 ps 1.9 65 –40 63 10 ps 1.8 71 –40 66 10 ps 1.7 78 –40 69 10 ps 1.6 85 –40 73 10 ps 1.5 93 –40 77 10 ps 1.4 103 –40 82 10 ps 1.3 114 –40 87 10 ps 1.2 127 –40 94 10 ps 1.1 142 –40 101 10 ps 1.0 160 –40 110 10 ps PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 25 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Table 11: Data Setup and Hold Derating Values Data Slew Rate (V/ns) tDS VREF to CK/CK# Crossing tDS VIH(AC) MIN to CK/CK# Crossing tDH CK/CK# Crossing to VREF tDH CK/CK# Crossing to VIH(DC) MIN Units DK, DK# Differential Slew Rate: 2.0 V/ns 2.0 0 –100 0 –50 ps 1.9 5 –100 3 –50 ps 1.8 11 –100 6 –50 ps 1.7 18 –100 9 –50 ps 1.6 25 –100 13 –50 ps 1.5 33 –100 17 –50 ps 1.4 43 –100 22 –50 ps 1.3 54 –100 27 –50 ps 1.2 67 –100 34 –50 ps 1.1 82 –100 41 –50 ps 1.0 100 –100 50 –50 ps DK, DK# Differential Slew Rate: 1.5 V/ns 2.0 30 –70 30 –20 ps 1.9 35 –70 33 –20 ps 1.8 41 –70 36 –20 ps 1.7 48 –70 39 –20 ps 1.6 55 –70 43 –20 ps 1.5 63 –70 47 –20 ps 1.4 73 –70 52 –20 ps 1.3 84 –70 57 –20 ps 1.2 97 –70 64 –20 ps 1.1 112 –70 71 –20 ps 1.0 130 –70 80 –20 ps DK, DK# Differential Slew Rate: 1.0 V/ns 2.0 60 –40 60 10 ps 1.9 65 –40 63 10 ps 1.8 71 –40 66 10 ps 1.7 78 –40 69 10 ps 1.6 85 –40 73 10 ps 1.5 93 –40 77 10 ps 1.4 103 –40 82 10 ps 1.3 114 –40 87 10 ps 1.2 127 –40 94 10 ps 1.1 142 –40 101 10 ps 1.0 160 –40 110 10 ps

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 26 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Figure 10: Nominal tAS/tCS/tDS and tAH/tCH/tDH Slew Rate Notes: 1. Capacitance is not tested on ZQ pin. 2. JTAG pins are tested at 50 MHz. Table 12: Capacitance Notes 1–2 apply to entire table Description Symbol Conditions Min Max Units Address/control input capacitance CI TA = 25°C; f = 100 MHz VDD = VDDQ = 1.8V 1.5 2.5 pF Input/output capacitance (DQ, DM, and QK/QK#) CO 3.5 5.0 pF Clock capacitance (CK/CK#, and DK/DK#) CCK 2.0 3.0 pF JTAG pins CJTAG 2.0 5.0 pF VSWING (MAX) VREF to AC region VREF to DC region VREF to DC region VREF to AC region VREF(DC) VIL(DC) MAX VIL(AC) MAX VSSQ VIH(DC) MIN VIH(AC) MIN VDDQ

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 27 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Table 13: AC Electrical Characteristics: -25, -33, -5 Notes 1–4 (page 39) apply to the entire table Description Symbol -25 -33 -5 Min Max Min Max Min Max Units Notes Clock Input clock cycle time tCK 2.5 5.7 3.3 5.7 5.0 5.7 ns Input data clock cycle time tDK tCK tCK tCK ns Clock jitter: period tJITPER –150 150 –200 200 –250 250 ps 5, 6 Clock jitter: cycle-to-cycle tJITCC 300 400 500 ps Clock HIGH time tCKH, tDKH 0.45 0.55 0.45 0.55 0.45 0.55 tCK Clock LOW time tCKL, tDKL 0.45 0.55 0.45 0.55 0.45 0.55 tCK Clock to input data clock tCKDK –0.3 0.5 –0.3 1.0 –0.3 1.5 ns Mode register set cycle time to any command tMRSC 6 – 6 – 6 – tCK Setup Times Address/command and input setup time tAS/tCS 0.4 – 0.5 – 0.8 – ns Data-in and data mask to DK setup time tDS 0.25 – 0.3 – 0.4 – ns Hold Times Address/command and input hold time tAH/tCH 0.4 – 0.5 – 0.8 – ns Data-in and data mask to DK hold time tDH 0.25 – 0.3 – 0.4 – ns Data and Data Strobe Output data clock HIGH time tQKH 0.9 1.1 0.9 1.1 0.9 1.1 tCKH Output data clock LOW time tQKL 0.9 1.1 0.9 1.1 0.9 1.1 tCKL Half-clock period tQHP MIN (tQKH, tQKL) – MIN (tQKH, tQKL) – MIN (tQKH, tQKL) – QK edge to clock edge skew tCKQK –0.25 0.25 –0.3 0.3 –0.5 0.5 ns QK edge to output data edge tQKQ0, tQKQ1 –0.2 0.2 –0.25 0.25 –0.3 0.3 ns 7 QK edge to any output data edge tQKQ –0.3 0.3 –0.35 0.35 –0.4 0.4 ns 8 QK edge to QVLD tQKVLD –0.3 0.3 –0.35 0.35 –0.4 0.4 ns Data valid window tDVW tQHP - (tQKQx [MAX] + |tQKQx [MIN]|) – tQHP - (tQKQx [MAX] + |tQKQx [MIN]|) – tQHP - (tQKQx [MAX] + |tQKQx [MIN]|) – Refresh Average periodic refresh interval tREFI – 0.49 – 0.49 – 0.49 μs 9

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 28 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Electrical Specifications – AC and DC Notes 1. All timing parameters are measured relative to the crossing point of CK/CK#, DK/DK# and to the crossing point with VREF of the command, address, and data signals. 2. Outputs measured with equivalent load: 3. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. 4. AC timing may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). 5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 6. Frequency drift is not allowed. 7. tQKQ0 is referenced to DQ0–DQ17 for the x36 configuration and DQ0–DQ8 for the x18 configuration. tQKQ1 is referenced to DQ18–DQ35 for the x36 configuration and DQ9–DQ17 for the x18 configuration. 8. tQKQ takes into account the skew between any QKx and any Q. 9. To improve efficiency, eight AREF commands (one for each bank) can be posted to the RLDRAM on consecutive cycles at periodic intervals of 3.90μs. 10pF DQ 50Ω VTT Test point

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 29 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Temperature and Thermal Impedance Temperature and Thermal Impedance It is imperative that the RLDRAM device’s temperature specifications, shown in Table 14, be maintained in order to ensure the junction temperature is in the proper operating range to meet data sheet specifications. An important step in maintaining the proper junction temperature is using the device’s thermal impedances correctly. The thermal impedances are listed for the packages available. Incorrectly using thermal impedances can produce significant errors. Read Micron technical note TN-00-08, “Thermal Applications” prior to using the thermal impedances listed in Table 14. For designs that are expected to last several years and require the flexibility to use several DRAM die shrinks, consider using final target theta values (rather than existing values) to account for increased thermal impedances from the die size reduction. The RLDRAM device’s safe junction temperature range can be maintained when the TC specification is not exceeded. In applications where the device’s ambient temperature is too high, use of forced air and/or heat sinks may be required in order to satisfy the case temperature specifications.

Notes: 1. MAX storage case temperature; TSTG is measured in the center of the package, as shown in Figure 10 on page 29. This case temperature limit is allowed to be exceeded briefly during package reflow, as noted in Micron technical note TN-00-15. 2. Temperatures greater than 110°C may cause permanent damage to the device. This is a stress rating only and functional operation of the device at or above this is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability of the part. 3. Junction temperature depends upon package type, cycle time, loading, ambient temperature, and airflow. 4. MAX operating case temperature; TC is measured in the center of the package, as shown in Figure 10 on page 29. 5. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 6. Both temperature specifications must be satisfied. Table 14: Temperature Limits Parameter Symbol Min Max Units Notes Storage temperature TSTG –55 +150 °C 1 Reliability junction temperature Commercial TJ – +110 °C 2 Industrial – +110 °C 2 Operating junction temperature Commercial TJ 0 +100 °C 3 Industrial –40 +100 °C 3 Operating case temperature Commercial TC 0 +95 °C 4, 5 Industrial –40 +95 °C 4, 5, 6 PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO_D2.fm - Rev N 5/08 EN 30 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Temperature and Thermal Impedance Notes: Thermal impedance data is based on a number of samples from multiple lots and should be viewed as a typical number. Figure 11: Example Temperature Test Point Location Table 15: Thermal Impedance Package Substrate θ JA (°C/W) Airflow = 0m/s θ JA (°C/W) Airflow = 1m/s θ JA (°C/W) Airflow = 2m/s θ JB (°C/W) θ JC (°C/W) μBGA 2-layer 41.2 29.1 25.3 14.3 2.27 4-layer 28.2 21.9 19.9 13.6 FBGA 2-layer 42.2 29.3 25.3 16.4 2.6 4-layer 28.5 22.0 19.9 13.4 11.00 5.50 18.50 9.25 Test point

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 30 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands Commands The following table provides descriptions of the valid commands of the RLDRAM. All input states or sequences not shown are illegal or reserved. All command and address inputs must meet setup and hold times around the rising edge of CK. Notes: 1. When the chip is deselected, internal NOP commands are generated and no commands are accepted. 2. n = 20. Notes: 1. X = “Don’t Care;” H = logic HIGH; L = logic LOW; A = valid address; BA = valid bank address. 2. n = 20. 3. Only A0–A17 are used for the MRS command. 4. Address width varies with burst length; see Table 19 on page 34 for details. Table 16: Description of Commands Command Description Notes DSEL/NOP The NOP command is used to perform a no operation to the RLDRAM, which essentially deselects the chip. Use the NOP command to prevent unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. Output values depend on command history. 1 MRS The mode register is set via the address inputs A0–A17. See Figure 11 on page 32 for further information. The MRS command can only be issued when all banks are idle and no bursts are in progress. READ The READ command is used to initiate a burst read access to a bank. The value on the BA0– BA2 inputs selects the bank, and the address provided on inputs A0–An selects the data location within the bank. 2 WRITE The WRITE command is used to initiate a burst write access to a bank. The value on the BA0– BA2 inputs selects the bank, and the address provided on inputs A0–An selects the data location within the bank. Input data appearing on the DQ is written to the memory array subject to the DM input logic level appearing coincident with the data. If the DM signal is registered LOW, the corresponding data will be written to memory. If the DM signal is registered HIGH, the corresponding data inputs will be ignored (that is, this part of the data word will not be written). 2 AREF The AREF command is used during normal operation of the RLDRAM to refresh the memory content of a bank. The command is nonpersistent, so it must be issued each time a refresh is required. The value on the BA0–BA2 inputs selects the bank. The refresh address is generated by an internal refresh controller, effectively making each address bit a “Don’t Care” during the AREF command. See “AUTO REFRESH (AREF)” on page 39 for more details. Table 17: Command Table Notes 1–2 apply to the entire table Operation Code CS# WE# REF# A0–An2 BA0–BA2 Notes Device DESELECT/no operation DSEL/NOP H X X X X MRS MRS L L L OPCODE X 3 READ READ L H H A BA 4 WRITE WRITE L L H A BA 4 AUTO REFRESH AREF L H L X BA PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 31 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands MODE REGISTER SET (MRS) The mode register set stores the data for controlling the operating modes of the memory. It programs the RLDRAM configuration, burst length, test mode, and I/O options. During an MRS command, the address inputs A0–A17 are sampled and stored in the mode register. After issuing a valid MRS command, tMRSC must be met before any command can be issued to the RLDRAM. This statement does not apply to the consecutive MRS commands needed for internal logic reset during the initialization routine. The MRS command can only be issued when all banks are idle and no bursts are in progress. Note: The data written by the prior burst length is not guaranteed to be accurate when the burst length of the device is changed. DON’T CARE CK CK# CS# WE# REF# ADDRESS OPCODE BANK ADDRESS PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 32 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands

Figure 11: Mode Register Definition in Nonmultiplexed Address Mode Notes: 1. A10–A17 must be set to zero; A18–An = “Don’t Care.” 2. A6 not used in MRS. 3. BL = 8 is not available. 4. DLL RESET turns the DLL off. 5. Available in 576Mb part only. 6. ±30 percent temperature variation. Reserved1 AM BL Config A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Mode Register (Mx) Address Bus 9 8 7 6 5 4 3 2 1 0 A17 17–10 Configuration 13 (default) 13 2 3 43,5 55 Reserved Reserved M0 0 1 0 1 0 1 0 1 M1 0 0 1 1 0 0 1 1 M2 0 0 0 0 1 1 1 1 M5 0 1 Address MUX Nonmultiplexed (default) Multiplexed M8 0 1 Drive Impedance Internal 50Ω6 (default) External (ZQ) M9 0 1 On-Die Termination Off (default) On ODT DLL NA2 M3 0 1 0 1 Burst Length 2 (default) 4 8 Reserved M4 0 0 1 1 IM . . . M7 0 1 DLL Reset DLL reset4 (default) DLL enabled

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 33 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands Configuration Tables Table 18 shows the different configurations that can be programmed into the mode register. The WRITE latency is equal to the READ latency plus one in each configuration in order to maximize data bus utilization. Bits M0, M1, and M2 are used to select the configuration during the MRS command. Notes: 1. BL = 8 is not available. Burst Length (BL) Burst length is defined by M3 and M4 of the mode register. Read and write accesses to the RLDRAM are burst-oriented, with the burst length being programmable to 2, 4, or 8. Figure 12 on page 34 illustrates the different burst lengths with respect to a READ command. Changes in the burst length affect the width of the address bus (see Table 19 on page 34 for details). Note: The data written by the prior burst length is not guaranteed to be accurate when the burst length of the device is changed. Table 18: Cycle Time and READ/WRITE Latency Configuration Table Parameter Configuration 11 2 3 Units tRC 4 6 8 tCK tRL 4 6 8 tCK tWL 5 7 9 tCK Valid frequency range 200–175 300–175 400–175 MHz

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 34 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands Figure 12: Read Burst Lengths Notes: 1. DO an = data-out from bank a and address an. 2. Subsequent elements of data-out appear after DO n. 3. Shown with nominal tCKQK. Address Multiplexing Although the RLDRAM has the ability to operate with an SRAM interface by accepting the entire address in one clock, an option in the mode register can be set so that it functions with multiplexed addresses, similar to a traditional DRAM. In multiplexed address mode, the address can be provided to the RLDRAM in two parts that are latched into the memory with two consecutive rising clock edges. This provides the advantage of only needing a maximum of 11 address balls to control the RLDRAM, reducing the number of Table 19: Address Widths at Different Burst Lengths Burst Length x9 x18 x36 2 A0–A20 A0–A19 A0–A18 4 A0–A19 A0–A18 A0–A17 8 A0–A18 A0–A17 n/a COMMAND ADDRESS DQ QVLD DO an QK QK# QK QK# QK QK# RL = 4 CK CK# DQ DO an TRANSITIONING DATA DON’T CARE DQ DO an READ NOP NOP NOP NOP NOP NOP NOP Bank a, Col n T0 T1 T2 T3 T4 T4n T5 T5n T6 T6n T7 T7n QVLD QVLD BL = 8 BL = 4 BL = 2 NOP

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 35 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands signals on the controller side. The data bus efficiency in continuous burst mode is only affected when using the BL = 2 setting since the device requires two clocks to read and write the data. The bank addresses are delivered to the RLDRAM at the same time as the WRITE and READ command and the first address part, Ax. Table 21 on page 60 and Table 22 on page 61 show the addresses needed for both the first and second rising clock edges (Ax and Ay, respectively). The AREF command does not require an address on the second rising clock edge, as only the bank address is needed during this command. Because of this, AREF commands may be issued on consecutive clocks. The multiplexed address option is available by setting bit M5 to “1” in the mode register. Once this bit is set, the READ, WRITE, and MRS commands follow the format described in Figure 35 on page 57. Further information on operation with multiplexed addresses can be seen in “Multiplexed Address Mode” on page 57. DLL RESET DLL RESET is selected with bit M7 of the mode register as is shown in Figure 11 on page 32. The default setting for this option is LOW, whereby the DLL is disabled. Once M7 is set HIGH, 1,024 cycles (5μs at 200 MHz) are needed before a READ command can be issued. This time allows the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tCKQK parameter. A reset of the DLL is necessary if tCK or VDD is changed after the DLL has already been enabled. To reset the DLL, an MRS command must be issued where M7 is set LOW. After waiting tMRSC, a subsequent MRS command should be issued whereby M7 goes HIGH. 1,024 clock cycles are then needed before a READ command is issued. Drive Impedance Matching The RLDRAM II is equipped with programmable impedance output buffers. This option is selected by setting bit M8 HIGH during the MRS command. The purpose of the programmable impedance output buffers is to allow the user to match the driver impedance to the system. To adjust the impedance, an external precision resistor (RQ) is connected between the ZQ ball and VSS. The value of the resistor must be five times the desired impedance. For example, a 300Ω resistor is required for an output impedance of 60Ω. The range of RQ is 125–300Ω, which guarantees output impedance in the range of 25–60Ω (within 15 percent). Output impedance updates may be required because over time variations may occur in supply voltage and temperature. When the external drive impedance is enabled in the MRS, the device will periodically sample the value of RQ. An impedance update is transparent to the system and does not affect device operation. All data sheet timing and current specifications are met during an update. When bit M8 is set LOW during the MRS command, the RLDRAM provides an internal impedance at the output buffer of 50Ω (±30 percent with temperature variation). This impedance is also periodically sampled and adjusted to compensate for variation in supply voltage and temperature. On-Die Termination (ODT) ODT is enabled by setting M9 to “1” during an MRS command. With ODT on, the DQs and DM are terminated to VTT with a resistance RTT. The command, address, QVLD, and clock signals are not terminated. Figure 13 on page 36 shows the equivalent circuit of a DQ receiver with ODT. The ODT function is dynamically switched off when a DQ begins PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 36 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands to drive after a READ command is issued. Similarly, ODT is designed to switch on at the DQs after the RLDRAM has issued the last piece of data. The DM pin will always be terminated. See section entitled “Operations” on page 40 for relevant timing diagrams. Notes: 1. All voltages referenced to VSS (GND). 2. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 3. The RTT value is measured at 95°C TC. Figure 13: On-Die Termination-Equivalent Circuit Table 20: On-Die Termination DC Parameters Description Symbol Min Max Units Notes Termination voltage VTT 0.95 × VREF 1.05 × VREF V 1, 2 On-die termination RTT 125 185 Ω 3 VTT SW RTT DQ Receiver

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 37 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands WRITE Write accesses are initiated with a WRITE command, as shown in Figure 14. The address needs to be provided during the WRITE command. During WRITE commands, data will be registered at both edges of DK according to the programmed burst length (BL). The RLDRAM operates with a WRITE latency (WL) that is one cycle longer than the programmed READ latency (RL + 1), with the first valid data registered at the first rising DK edge WL cycles after the WRITE command. Any WRITE burst may be followed by a subsequent READ command (assuming tRC is met). To avoid external data bus contention, at least one NOP command is needed between the WRITE and READ commands. Figure 21 on page 45 and Figure 22 on page 46 illustrate the timing requirements for a WRITE followed by a READ where one and two intermediary NOPs are required, respectively. Setup and hold times for incoming DQ relative to the DK edges are specified as tDS and tDH. The input data is masked if the corresponding DM signal is HIGH. The setup and hold times for the DM signal are also tDS and tDH. Figure 14: WRITE Command CK# CK WE# REF# CS# ADDRESS A BANK ADDRESS BA DON’T CARE

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 38 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands READ Read accesses are initiated with a READ command, as shown in Figure 15. Addresses are provided with the READ command. During READ bursts, the memory device drives the read data so it is edge-aligned with the QKx signals. After a programmable READ latency, data is available at the outputs. One half clock cycle prior to valid data on the read bus, the data valid signal, QVLD, transitions from LOW to HIGH. QVLD is also edge-aligned with the QKx signals. The skew between QK and the crossing point of CK is specified as tCKQK. tQKQ0 is the skew between QK0 and the last valid data edge generated at the DQ signals associated with QK0 (tQKQ0 is referenced to DQ0–DQ17 for the x36 configuration and DQ0–DQ8 for the x18 configuration). tQKQ1 is the skew between QK1 and the last valid data edge generated at the DQ signals associated with QK1 (tQKQ1 is referenced to DQ18–DQ35 for the x36 and DQ9–DQ17 for the x18 configuration). tQKQx is derived at each QKx clock edge and is not cumulative over time. tQKQ is defined as the skew between either QK differential pair and any output data edge. After completion of a burst, assuming no other commands have been initiated, output data (DQ) will go High-Z. The QVLD signal transitions LOW on the last bit of the READ burst. Note that if CK/CK# violates the VID(DC) specification while a READ burst is occurring, QVLD will remain HIGH until a dummy READ command is issued. The QK clocks are free-running and will continue to cycle after the read burst is complete. Back-toback READ commands are possible, producing a continuous flow of output data. The data valid window is derived from each QK transition and is defined as: tQHP - (tQKQ [MAX] + |tQKQ [MIN]|). See Figures 28–30 for illustration. Any READ burst may be followed by a subsequent WRITE command. Figure 27 on page 50 illustrate the timing requirements for a READ followed by a WRITE. Some systems having long line lengths or severe skews may need additional idle cycles inserted between READ and WRITE commands to prevent data bus contention. Figure 15: READ Command DON’T CARE CK CK# CS# WE# REF# A BA ADDRESS BANK ADDRESS

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 39 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Commands AUTO REFRESH (AREF) AREF is used to perform a REFRESH cycle on one row in a specific bank. Because the row addresses are generated by an internal refresh counter for each bank, the external address balls are “Don’t Care.” The bank addresses must be provided during the AREF command. The bank address is needed during the AREF command so refreshing of the part can effectively be hidden behind commands to other banks. The delay between the AREF command and a subsequent command to the same bank must be at least tRC. Within a period of 32ms (tREF), the entire device must be refreshed. For the 288Mb device, the RLDRAM requires 64K cycles at an average periodic interval of 0.49μsMAX (actual periodic refresh interval is 32ms/8K rows/8 banks = 0.488μs). To improve efficiency, eight AREF commands (one for each bank) can be posted to the RLDRAM at periodic intervals of 3.9μs (32ms/8K rows = 3.90μs). Figure 31 on page 54 illustrates an example of a refresh sequence. Figure 16: AUTO REFRESH Command CK# CK WE# REF# CS# ADDRESS BANK ADDRESS BA DON’T CARE

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 40 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Operations INITIALIZATION The RLDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operations or permanent damage to the device. The following sequence is used for power-up: 1. Apply power (VEXT, VDD, VDDQ, VREF, VTT) and start clock as soon as the supply voltages are stable. Apply VDD and VEXT before or at the same time as VDDQ.1 Apply VDDQ before or at the same time as VREF and VTT. Although there is no timing relation between VEXT and VDD, the chip starts the power-up sequence only after both voltages approach their nominal levels. CK/CK# must meet VID(DC) prior to being applied.2 Apply NOP conditions to command pins. Ensuring CK/CK# meet VID(DC) while applying NOP conditions to the command pins guarantees that the RLDRAM will not receive unwanted commands during initialization. 2. Maintain stable conditions for 200μs (MIN). 3. Issue at least three consecutive MRS commands: two or more dummies plus one valid MRS. The purpose of these consecutive MRS commands is to internally reset the logic of the RLDRAM. Note that tMRSC does not need to be met between these consecutive commands. It is recommended that all address pins are held LOW during the dummy MRS commands. 4. tMRSC after the valid MRS, an AUTO REFRESH command to all 8 banks (along with 1,024 NOP commands) must be issued prior to normal operation. The sequence of the eight AUTO REFRESH commands (with respect to the 1,024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank. Note that older versions of the data sheet required each of these AUTO REFRESH commands be separated by 2,048 NOP commands. This properly initializes the RLDRAM but is no longer required. Notes: 1. It is possible to apply VDDQ before VDD. However, when doing this, the DQs, DM, and all other pins with an output driver, will go HIGH instead of tri-stating. These pins will remain HIGH until VDD is at the same level as VDDQ. Care should be taken to avoid bus conflicts during this period. 2. If VID(DC) on CK/CK# can not be met prior to being applied to the RLDRAM, placing a large external resistor from CS# to VDD is a viable option for ensuring the command bus does not receive unwanted commands during this unspecified state. PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 41 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations

Figure 17: Power-Up/Initialization Sequence Notes: 1. Recommend all address pins held LOW during dummy MRS commands. 2. A10–A17 must be LOW. 3. DLL must be reset if tCK or VDD are changed. 4. CK and CK# must be separated at all times to prevent bogus commands from being issued. 5. The sequence of the eight AUTO REFRESH commands (with respect to the 1,024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank. RTT BANK ADDRESS Power-up: VDD and stable clock (CK, CK#) T = 200μs (MIN) DM ( ) ( ) ( ) ( ) ADDRESS VTT VREF VDDQ COMMAND NOP NOP NOP ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) DON’T CARE VDD VEXT DQ tMRSC Refresh all banks5 1,024 NOP commands ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) MRS REF CODE2 Bank 0 Bank 7 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) MRS MRS CODE1,2 CODE1,2 ( ) ( ) ( ) ( ) VALID VALID VALID CK CK# tCKL T0 T1 T2 tCKH tCK T3 ( ) ( ) ( ) ( ) T4 T5 T6 T7 T8 T9 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) DK DK# tDKH tDKL tDK ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) NOP ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) REF ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) High-Z ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Indicates a break in time scale

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 42 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 18: Power-Up/Initialization Flow Chart Notes: 1. The sequence of the eight AUTO REFRESH commands (with respect to the 1,024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank. VDD, and VEXT ramp VDDQ ramp Apply VREF and VTT Apply stable CK/CK# and DK/DK# Issue MRS command—A10–A17 must be LOW Wait at least 200μs Issue MRS command—A10–A17 must be LOW Desired load mode register with A10–A17 LOW Assert NOP for tMRSC Issue AUTO REFRESH to bank 0 Issue AUTO REFRESH to bank 1 Issue AUTO REFRESH to bank 4 Issue AUTO REFRESH to bank 5 Issue AUTO REFRESH to bank 6 Issue AUTO REFRESH to bank 7 Valid command Wait 1,024 NOP commands1 Step 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Issue AUTO REFRESH to bank 3 Issue AUTO REFRESH to bank 2 MRS commands must be on consecutive clock cycles Voltage rails can be applied simultaneously PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 43 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations WRITE Figure 19: WRITE Burst Notes: 1. DI an = data-in for bank a and address n; subsequent elements of burst are applied following DI an. 2. BL = 4. tCKDK (NOM) COMMAND WRITE NOP NOP NOP NOP NOP ADDRESS Bank a, Add n NOP CK CK# T0 T1 T2 T3 T4 T5 T5n T6 T6n T7 DK DK# DQ DM DI an tCKDK (MIN) DQ DM DI an tCKDK (MAX) DQ DM DI an TRANSITIONING DATA DON’T CARE WL = 5 DK DK# DK DK# NOP WL - tCKDK WL + tCKDK

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 44 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 20: Consecutive WRITE-to-WRITE Notes: 1. DI an (or bn) = data-in for bank a (or b) and address n. 2. Three subsequent elements of the burst are applied following DI for each bank. 3. BL = 4. 4. Each WRITE command may be to any bank; if the second WRITE is to the same bank, tRC must be met. 5. Nominal conditions are assumed for specifications not defined. CK CK# COMMAND WRITE NOP WRITE WRITE NOP NOP NOP NOP NOP Bank a, Add n Bank b, Add n Bank a, Add n NOP ADDRESS T0 T1 T2 T3 T4 T5 T6 T6n T5n T7 T8 T9 T8n T7n DQ DM DI bn DI an DI an TRANSITIONING DATA DON’T CARE WL = 5 tRC = 4 WL = 5 DK DK#

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 45 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 21: WRITE-to-READ Notes: 1. DI an = data-in for bank a and address n. 2. DO bn = data-out from bank b and address n. 3. Two subsequent elements of each burst follow DI an and DO bn. 4. BL = 2. 5. Nominal conditions are assumed for specifications not defined. COMMAND NOP READ NOP NOP NOP ADDRESS Bank a, Add n NOP CK CK# T0 T1 T2 T3 T4 T5 T5n T6 T6n T7 DQ DM DI an DO bn DON’T CARE TRANSITIONING DATA WL = 5 QVLD DK# DK QK# QK NOP Bank b, Add n WRITE RL = 4

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 46 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 22: WRITE-to-READ (Separated by Two NOPs) Notes: 1. DI an = data-in for bank a and address n. 2. DO bn = data-out from bank b and address n. 3. One subsequent element of each burst follow both DI an and DO bn. 4. BL = 2. 5. Only one NOP separating the WRITE and READ would have led to contention on the data bus because of the input and output data timing conditions being used. 6. Nominal conditions are assumed for specifications not defined. COMMAND NOP NOP READ NOP NOP NOP ADDRESS Bank a, Add n CK CK# T0 T1 T2 T3 T4 T5 T5n T6 T7 T7n T8 DQ DM DI an DO bn TRANSITIONING DATA DON’T CARE WL = 5 QVLD DK# DK QK# QK NOP NOP Bank b, Add n WRITE RL = 4 tQKQ (MIN) tCKQK (MIN) tCKDK (MAX) tDH

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 47 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 23: WRITE – DM Operation Notes: 1. DI an = data-in for bank a and address n. 2. Subsequent elements of burst are provided on following clock edges. 3. BL = 4. 4. Nominal conditions are assumed for specifications not defined. CK CK# DK DK# tCK tCH tCL T0 T1 T2 T3 T4 T5 T6 T6n T7 T7n T8 COMMAND NOP WRITE NOP Bank a, Add n NOP NOP NOP NOP NOP tDKL tDKH DQ DM DI an tDS tDH TRANSITIONING DATA DON’T CARE ADDRESS WL = 5 NOP

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 48 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations READ Figure 24: Basic READ Burst Timing Notes: 1. DO an = data-out from bank a and address an. 2. Three subsequent elements of the burst are applied following DO an. 3. BL = 4. 4. Nominal conditions are assumed for specifications not defined. CK CK# tCK tCH tCL tQK tQKH tQKL tRC = 4 RL = 4 DM T0 T1 T2 T3 T4 T5 T5n T6 T6n T7 QK QVLD QK# DQ tCKQK (MIN) tCKQK (MIN) DO an DO an COMMAND NOP READ NOP Bank a Add n Bank a Add n NOP NOP READ NOP NOP tQK tQKH tQKL TRANSITIONING DATA DON’T CARE ADDRESS QK QVLD QK# DQ tCKQK (MAX) tCKQK (MAX) tQKVLD tQKVLD

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 49 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 25: Consecutive READ Bursts (BL = 2) Notes: 1. DO an (or bn or cn) = data-out from bank a (or bank b or bank c) and address n. 2. One subsequent element of the burst from each bank appears after each DO x. 3. Nominal conditions are assumed for specifications not defined. 4. Example applies only when READ commands are issued to same device. 5. Bank address can be to any bank, but the subsequent READ can only be to the same bank if tRC has been met. 6. Data from the READ commands to bank d through bank g will appear on subsequent clock cycles that are not shown. Figure 26: Consecutive READ Bursts (BL = 4) Notes: 1. DO an (or bn) = data-out from bank a (or bank b) and address n. 2. Three subsequent elements of the burst from each bank appears after each DO x. 3. Nominal conditions are assumed for specifications not defined. 4. Example applies only when READ commands are issued to same device. 5. Bank address can be to any bank, but the subsequent READ can only be to the same bank if tRC has been met. 6. Data from the READ commands to banks c and d will appear on subsequent clock cycles that are not shown.

COMMAND READ READ READ READ READ READ ADDRESS CK CK# QK QK# QVLD DQ RL = 4 DO an DO bn DO cn T0 T1 T2 T3 Bank a Add n Bank b Add n Bank c Add n Bank d Add n Bank e Add n Bank f Add n Bank g Add n READ T4 T4n T5 T5n T6 T6n TRANSITIONING DATA DON’T CARE COMMAND READ NOP READ NOP READ NOP ADDRESS Bank a Add n Bank b Add n Bank c Add n Bank d Add n CK CK# QK QK# QVLD DQ RL = 4 DO an DO bn T0 T1 T2 T3 READ T4 T4n T5 T5n T6 T6n TRANSITIONING DATA DON’T CARE

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 50 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 27: READ-to-WRITE Notes: 1. DO an = data-out from bank a and address n. 2. DI bn = data-in for bank b and address n. 3. Three subsequent elements of each burst follow DI bn and each DO an. 4. BL = 4. 5. Nominal conditions are assumed for specifications not defined. CK CK# COMMAND ADDRESS QVLD DQ READ T0 T1 T2 TRANSITIONING DATA DON’T CARE WRITE NOP T3 T4 T5 NOP NOP T6 NOP WL = RL + 1 = 5 T7 T8 NOP NOP DK DK# QK DM QK# DO an DI bn RL = 4 Bank a, Add n Bank b, Add n NOP

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 51 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 28: Read Data Valid Window for x9 Device Notes: 1. tQHP is defined as the lesser of tQKH or tQKL. 2. tQKQ0 is referenced to DQ0–DQ8. 3. Minimum data valid window (tDVW) can be expressed as tQHP - (tQKQx [MAX] + |tQKQx [MIN]|). tQHP1 tQHP1 tQHP1 tQHP1 tQKQ0 (MAX)2 tQKQ0 (MAX)2 tQKQ0 (MIN)2 tQKQ0 (MIN)2 tQKQ0 (MIN)2 tQKQ0 (MAX)2 tQKQ0 (MIN)2 tQKQ0 (MAX)2 DQ0 ............... DQ8 DQ (last valid data) DQ (first valid data) All DQs and QKs collectively QK0# QK0 tDVW3 tDVW3 tDVW3 tDVW3

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 52 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 29: Read Data Valid Window for x18 Device Notes: 1. tQHP is defined as the lesser of tQKH or tQKL. 2. tQKQ0 is referenced to DQ0–DQ8. 3. Minimum data valid window (tDVW) can be expressed as tQHP - (tQKQx [MAX] + |tQKQx [MIN]|). 4. tQKQ1 is referenced to DQ9–DQ17. 5. tQKQ takes into account the skew between any QKx and any DQ. tQHP1 tQHP1 tQHP1 tQHP1 tQKQ0 (MAX)2 tQKQ0 (MAX)2 tQKQ0 (MIN)2 tQKQ0 (MIN)2 tQKQ0 (MIN)2 tQKQ0 (MIN)2 tQKQ0 (MAX)2 tQKQ0 (MAX)2 DQ0 ............... DQ8 DQ (last valid data) DQ (first valid data) All DQs and QKs collectively QK0# QK0 tDVW3 tDVW3 tDVW3 tDVW3 tQHP1 tQHP1 tQHP1 tQHP1 tQKQ1 (MAX)4 tQKQ1 (MAX)4 tQKQ1 (MIN)4 tQKQ1 (MIN)4 tQKQ1 (MIN)4 tQKQ1 (MIN)4 tQKQ1 (MAX)4 tQKQ1 (MAX)4 DQ9 ............... DQ17 DQ (last valid data) DQ (first valid data) All DQs and QKs collectively QK1# QK1 tDVW3 tDVW3 tDVW3 tDVW3

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 53 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 30: Read Data Valid Window for x36 Device Notes: 1. tQHP is defined as the lesser of tQKH or tQKL. 2. tQKQ0 is referenced to DQ0–DQ17. 3. Minimum data valid window, tDVW, can be expressed as tQHP - (tQKQx [MAX] + |tQKQx [MIN]|). 4. tQKQ1 is referenced to DQ18–DQ35. 5. tQKQ takes into account the skew between any QKx and any DQ. tQHP1 tQHP1 tQHP1 tQHP1 tQKQ0 (MIN)2 tQKQ0 (MAX)2 tQKQ0 (MAX)2 tQKQ0 (MIN)2 tQKQ0 (MAX)2 tQKQ0 (MIN)2 tQKQ0 (MAX)2 tQKQ0 (MIN)2 DQ0 ............... DQ17 DQ (last valid data) DQ (first valid data) All DQs and QKs collectively QK0# QK0 tDVW3 tDVW3 tDVW3 tDVW3 Lower word tQHP1 tQHP1 tQHP1 tQHP1 tQKQ1 (MIN)4 tQKQ1 (MAX)4 tQKQ1 (MAX)4 tQKQ1 (MIN)4 tQKQ1 (MAX)4 tQKQ1(MIN)4 tQKQ1(MAX)4 tQKQ1 (MIN)4 DQ18 ............... DQ35 DQ (last valid data) DQ (first valid data) All DQs and QKs collectively QK1# QK1 tDVW3 tDVW3 tDVW3 tDVW3 Upper word

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 54 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations AUTO REFRESH Figure 31: AUTO REFRESH Cycle Notes: 1. AREFx = AUTO REFRESH command to bank x. 2. ACx = any command to bank x; ACy = any command to bank y. 3. BAx = bank address to bank x; BAy = bank address to bank y. CK CK# COMMAND AREFx AREFy ACx ACy ADDRESS BANK BAx BAy tCK tCH tCL DQ DM DK, DK# tRC T0 T1 T2 T3 DON’T CARE ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Indicates a break in time scale

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 55 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations On-Die Termination Figure 32: READ Burst with ODT Notes: 1. DO an = data out from bank a and address n. 2. DO an is followed by the remaining bits of the burst. 3. Nominal conditions are assumed for specifications not defined. COMMAND ADDRESS DQ DQ ODT QVLD DO an DQ ODT off QK QK# QK QK# QK QK# RL = 4 CK CK# DQ DQ ODT DQ ODT DO an TRANSITIONING DATA DON’T CARE DQ DO an READ NOP NOP NOP NOP NOP NOP NOP Bank a, Col n T0 T1 T2 T3 T4 T4n T5 T5n T6 T6n T7 T7n QVLD QVLD BL = 8 BL = 4 BL = 2 NOP DQ ODT on DQ ODT on DQ ODT on DQ ODT off on DQ ODT on DQ ODT off DQ ODT on

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 56 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 33: READ-NOP-READ with ODT Notes: 1. DO an (or bn) = data-out from bank a (or bank b) and address n. 2. BL = 2. 3. One subsequent element of the burst appear after DO an and DO bn. 4. Nominal conditions are assumed for specifications not defined. Figure 34: READ-to-WRITE with ODT Notes: 1. DO an = data-out from bank a and address n; DI bn = data-in for bank b and address n. 2. BL = 2. 3. One subsequent element of each burst appears after each DO an and DI bn. 4. Nominal conditions are assumed for specifications not defined. COMMAND ADDRESS DQ DQ ODT QVLD DO an DO bn DQ ODT off DQ ODT off QK QK# RL = 4 CK CK# TRANSITIONING DATA DON’T CARE READ NOP READ NOP NOP NOP NOP NOP Bank a, Col n Bank b, Col n T0 T1 T2 T3 T4 T4n T5 T6 T6n T7 NOP DQ ODT on DQ ODT on DQ ODT on CK# CK COMMAND ADDRESS RL = 4 DQ QKx QKx# DO an DI bn READ Bank a Add n WRITE NOP NOP NOP NOP NOP NOP NOP UNDEFINED DON’T CARE ODT ODT on ODT off ODT on WL = 5 DKx# DKx Bank b Add n T0 T1 T2 T3 T4 T4n T5 T6 T6n T7 T8 T9

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 57 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Multiplexed Address Mode Figure 35: Command Description in Multiplexed Address Mode Notes: 1. The minimum setup and hold times of the two address parts are defined tAS and tAH. BA BA BA ADDRESS BANK ADDRESS Ax Ay Ax Ay BA Ax Ay READ WRITE MRS REF DON’T CARE CK# CK CS# WE# REF#

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 58 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 36: Power-Up/Initialization Sequence in Multiplexed Address Mode Notes: 1. Recommended that all address pins held LOW during dummy MRS commands. 2. A10–A18 must be LOW. 3. Set address A5 HIGH. This enbles the part to enter multiplexed address mode when in nonmultiplexed mode operation. Multiplexed address mode can also be entered at some later time by issuing an MRS command with A5 HIGH. Once address bit A5 is set HIGH, tMRSC must be satisfied before the two-cycle multiplexed mode MRS command is issued. 4. Address A5 must be set HIGH. This and the following step set the desired mode register once the RLDRAM is in multiplexed address mode. 5. Any command or address. 6. The above sequence must be followed in order to power up the RLDRAM in the multiplexed address mode. 7. DLL must be reset if tCK or VDD are changed. 8. CK and CK# must separated at all times to prevent bogus commands from being issued. 9. The sequence of the eight AUTO REFRESH commands (with respect to the 1,024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank.

RTT BANK ADDRESS Power-up: VDD and stable clock (CK, CK#) T = 200μs (MIN) DM ( ) ( ) ( ) ( ) ADDRESS VTT VREF VDDQ COMMAND NOP NOP NOP ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) DON’T CARE VDD VEXT DQ tMRSC tMRSC Refresh all banks9 1,024 NOP commands ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) MRS MRS CODE2,3 Ax2,4 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) MRS MRS CODE1,2 CODE1,2 ( ) ( ) ( ) ( ) VALID5 VALID5 VALID5 CK CK# tCKL T0 T1 T2 tCKH tCK T3 ( ) ( ) T4 T5 T6 T7 T8 T9 T10 T11 ( ) ( ) ( ) ( ) DK DK# tDKH tDKL tDK ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) NOP High-Z ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Bank 7 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) NOP REF REF ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Ay2 Bank 0 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Indicates a break in time scale PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 59 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 37: Mode Register Definition in Multiplexed Address Mode Notes: 1. Bits A10–A18 must be set to zero. 2. BL = 8 is not available. 3. ±30 percent temperature variation. 4. DLL RESET turns the DLL off. 5. Ay8 not used in MRS. 6. Available only in 576Mb device. 7. BA0–BA2 are “Don’t Care.” 8. Addresses A0, A3, A4, A5, A8, and A9 must be set as shown in order to activate the mode register in the multiplexed address mode. 18–10 9 8 7 6 5 4 3 2 1 0 Reserved1 AM BL Config Mode Register (Mx) Configuration 12 (default) 12 2 3 42,6 56 Reserved Reserved M1 0 0 1 1 0 0 1 1 M2 0 0 0 0 1 1 1 1 M5 0 1 Address MUX Nonmultiplexed (default) Multiplexed M8 0 1 Drive Impedance Internal 50Ω3 (default) External (ZQ) M9 0 1 On-Die Termination Off (default) On DLL NA5 M7 0 1 DLL Reset DLL reset4 (default) DLL enabled ODT M3 0 1 0 1 Burst Length 2 (default) 4 8 Reserved M4 0 0 1 1 IM M0 0 1 0 1 0 1 0 1 Ay A18 . . . A9 A8 A4 A3 Ax A9 A8 A5 A4 A3 A0 A10 A18 . . . A10

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 60 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Address Mapping in Multiplexed Address Mode Notes: 1. X = “Don’t Care.” Table 21: 288Mb Address Mapping in Multiplexed Address Mode Data Width Burst Length Ball Address A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 x36 2 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 4 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 X Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 x18 2 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 A19 A11 A12 A16 A15 4 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 8 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 X Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 x9 2 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay A20 A1 A2 X A6 A7 A19 A11 A12 A16 A15 4 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 A19 A11 A12 A16 A15 8 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 X A11 A12 A16 A15

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 61 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Configuration Tables in Multiplexed Address Mode In multiplexed address mode, the read and write latencies are increased by one clock cycle. However, the RLDRAM cycle time remains the same as when in non-multiplexed address mode. Notes: 1. BL = 8 is not available. REFRESH Command in Multiplexed Address Mode Similar to other commands when in multiplexed address mode, AREF is executed on the rising clock edge following the one on which the command is issued. However, since only the bank address is required for AREF, the next command can be applied on the following clock. The operation of the AREF command and any other command is represented in Figure 38 on page 61. Figure 38: BURST REFRESH Operation with Multiplexed Addressing Notes: 1. Any command. 2. Bank n is chosen so that tRC is met.

Table 22: Cycle Time and READ/WRITE Latency Configuration Table in Multiplexed Mode Parameter Configuration 11 2 3 Units tRC 4 6 8 tCK tRL 5 7 9 tCK tWL 6 8 10 tCK Valid frequency range 200–175 300–175 400–175 MHz CK CK# COMMAND AC1 NOP Ay AREF AREF AREF AREF AREF AREF AREF AREF AC1 BANK Bank n Bank 0 Bank 1 Bank 2 Bank 3 Bank 4 Bank 5 Bank 6 Bank 7 Bank n ADDRESS Ax Ax Ay T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 DON’T CARE PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 62 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 39: Consecutive WRITE Bursts with Multiplexed Addressing Notes: 1. Data from the second WRITE command to bank a will appear on subsequent clock cycles that are not shown. 2. DI a = data-in for bank a; DI b = data-in for bank b. 3. Three subsequent elements of the burst are applied following DI for each bank. 4. Each WRITE command may be to any bank; if the second WRITE is to the same bank, tRC must be met. CK CK# COMMAND WRITE NOP Ay WRITE WRITE NOP NOP NOP NOP NOP BANK Bank a Ay NOP Bank b Bank a1 ADDRESS Ax Ax Ax Ay T0 T1 T2 T3 T4 T5 T6 T6n T7 T7n T8 T8n T9 DQ DM DI b DI a TRANSITIONING DATA DON’T CARE WL = 6 tRC = 4 DK DK#

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 63 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 40: WRITE-to-READ with Multiplexed Addressing Notes: 1. DI a = data-in for bank a. 2. DO b = data-out from bank b. 3. One subsequent element of each burst follows DI a and DO b. 4. BL = 2. 5. Nominal conditions are assumed for specifications not defined. 6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if tRC has been met. COMMAND NOP READ NOP NOP NOP ADDRESS Ax Ay NOP CK CK# T0 T1 T2 T3 T4 T5 T6 T6n T7 T7n DM TRANSITIONING DATA DON’T CARE WL = 6 QVLD DK# DK QK# QK NOP BANK Bank a Bank b WRITE RL = 5 DQ DI a Ax Ay DO b

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 64 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 41: Consecutive READ Bursts with Multiplexed Addressing Notes: 1. DO a = data-out from bank a. 2. Nominal conditions are assumed for specifications not defined. 3. BL = 4. 4. Three subsequent elements of the burst appear following DO a. 5. Example applies only when READ commands are issued to same device. 6. Bank address can be to any bank, but the subsequent READ can only be to the same bank if tRC has been met. 7. Data from the READ commands to banks b through bank d will appear on subsequent clock cycles that are not shown. COMMAND READ NOP READ NOP READ NOP ADDRESS Ax Ay Bank a CK CK# QK QK# BANK QVLD DQ RL = 5 DO a T0 T1 T2 T3 READ T4 T5 T5n T6 T6n TRANSITIONING DATA DON’T CARE Bank b Bank c Bank d Ax Ay Ax Ay Ax

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 65 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Operations Figure 42: READ-to-WRITE with Multiplexed Addressing Notes: 1. DO an = data-out from bank a. 2. DI bn = data-in for bank b. 3. Nominal conditions are assumed for specifications not defined. 4. BL = 4. 5. Three subsequent elements of the burst are applied following DO an. 6. Three subsequent elements of the burst which appear following DI bn are not all shown. 7. Bank address can be to any bank, but the WRITE command can only be to the same bank if tRC has been met. CK CK# COMMAND ADDRESS BANK QVLD DQ READ T0 T1 T2 TRANSITIONING DATA DON’T CARE WRITE NOP T3 T4 T5 T5n NOP NOP T6 T6n NOP WL = RL + 1 = 6 T7 T8 T8n NOP NOP DK DK# QK DM QK# DO an DI bn RL = 5 Ax Ay Ay Bank a Ax Bank b NOP

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 66 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) IEEE 1149.1 Serial Boundary Scan (JTAG) RLDRAM incorporates a serial boundary-scan test access port (TAP) for the purpose of testing the connectivity of the device once it has been mounted on a printed circuit board (PCB). As the complexity of PCB high-density surface mounting techniques increases, the boundary-scan architecture is a valuable resource for interconnectivity debug. This port operates in accordance with IEEE Standard 1149.1-2001 (JTAG) with the exception of the ZQ pin. To ensure proper boundary-scan testing of the ZQ pin, MRS bit M8 needs to be set to 0 until the JTAG testing of the pin is complete. Note that upon power up, the default state of MRS bit M8 is low. If the RLDRAM boundary scan register is to be used upon power up and prior to the initialization of the RLDRAM device, it is imperative that the CK and CK# pins meet VID(DC) or CS# be held HIGH from power up until testing. Not doing so could result in inadvertent MRS commands to be loaded, and subsequently cause unexpected results from address pins that are dependent upon the state of the mode register. If these measures cannot be taken, the part must be initialized prior to boundary scan testing. If a full initialization is not practical or feasible prior to boundary scan testing, a single MRS command with desired settings may be issued instead. After the single MRS command is issued, the tMRSC parameter must be satisfied prior to boundary scan testing. The input signals of the test access port (TDI, TMS, and TCK) use VDD as a supply, while the output signal of the TAP (TDO) uses VDDQ. The JTAG test access port utilizes the TAP controller on the RLDRAM, from which the instruction register, boundary scan register, bypass register, and ID register can be selected. Each of these functions of the TAP controller is described in detail below. Disabling the JTAG Feature It is possible to operate RLDRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state, which will not interfere with the operation of the device.

Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. All of the states in Figure 43: “TAP Controller State Diagram,” on page 68 are entered through the serial input of the TMS pin. A “0” in the diagram represents a LOW on the TMS pin during the rising edge of TCK while a “1” represents a HIGH on TMS. PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 67 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) Test Data-In (TDI) The TDI ball is used to serially input test instructions and data into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure 43 on page 68. TDI is connected to the most significant bit (MSB) of any register (see Figure 44 on page 68). Test Data-Out (TDO) The TDO output ball is used to serially clock test instructions and data out from the registers. The TDO output driver is only active during the Shift-IR and Shift-DR TAP controller states. In all other states, the TDO pin is in a High-Z state. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register (see Figure 44 on page 68). TAP Controller The TAP controller is a finite state machine that uses the state of the TMS pin at the rising edge of TCK to navigate through its various modes of operation. The TAP controller state diagram can be seen in Figure 43 on page 68. Each state is described in detail below. Test-Logic-Reset The test-logic-reset controller state is entered when TMS is held HIGH for at least five consecutive rising edges of TCK. As long as TMS remains HIGH, the TAP controller will remain in the test-logic-reset state. The test logic is inactive during this state. Run-Test/Idle The run-test/idle is a controller state in between scan operations. This state can be maintained by holding TMS LOW. From here either the data register scan, or subsequently, the instruction register scan can be selected. Select-DR-Scan Select-DR-scan is a temporary controller state. All test data registers retain their previous state while here. Capture-DR The capture-DR state is where the data is parallel-loaded into the test data registers. If the boundary scan register is the currently selected register, then the data currently on the pins is latched into the test data registers. Shift-DR Data is shifted serially through the data register while in this state. As new data is input through the TDI pin, data is shifted out of the TDO pin. Exit1-DR, Pause-DR, and Exit2-DR The purpose of exit1-DR is used to provide a path to return back to the run-test/idle state (through the update-DR state). The pause-DR state is entered when the shifting of data through the test registers needs to be suspended. When shifting is to reconvene, the controller enters the exit2-DR state and then can re-enter the shift-DR state.

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 68 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) Update-DR When the EXTEST instruction is selected, there are latched parallel outputs of the boundary-scan shift register that only change state during the update-DR controller state. Instruction Register States The instruction register states of the TAP controller are similar to the data register states. The desired instruction is serially shifted into the instruction register during the shift-IR state and is loaded during the update-IR state. Figure 43: TAP Controller State Diagram Figure 44: TAP Controller Block Diagram Notes: 1. x = 112 for all configurations. Capture-IR Shift-IR Exit1-IR Pause-IR Exit2-IR Update-IR 1 1 1 0 1 1 0 0 1 1 1 0 0 0 0 0 0 0 0 0 1 0 1 1 0 1 0 1 1 1 0 1 Test-logic reset Run-test/ Idle Select IR-scan Select DR-scan Capture-DR Shift-DR Exit1-DR Pause-DR Exit2-DR Update-DR 0 7 6 5 4 3 2 1 0 31 30 29 . . . 2 1 0 . . . . . 2 1 0 TCK TMS Selection circuitry Selection circuitry TDI TDO Boundry scan register Identification register Instruction register TAP controller Bypass register x1

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 69 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) Performing a TAP RESET A reset is performed by forcing TMS HIGH (VDDQ) for five rising edges of TCK. This RESET does not affect the operation of the RLDRAM and may be performed while the RLDRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the RLDRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Eight-bit instructions can be serially loaded into the instruction register. This register is loaded during the update-IR state of the TAP controller. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the capture-IR state, the two LSBs are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the RLDRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the RLDRAM. Several balls are also included in the scan register to reserved balls. The RLDRAM has a 113-bit register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the shift-DR state. Table 29 on page 74 shows the order in which the bits are connected. Each bit corresponds to one of the balls on the RLDRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the RLDRAM and can be shifted out when the TAP controller is in the shift-DR state. The ID register has a vendor code and other information described in Table 26 on page 73. PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 70 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) TAP Instruction Set Overview Many different instructions (28) are possible with the 8-bit instruction register. All combinations used are listed in Table 28 on page 74. These six instructions are described in detail below. The remaining instructions are reserved and should not be used. The TAP controller used in this RLDRAM is fully compliant to the 1149.1 convention. Instructions are loaded into the TAP controller during the shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the update-IR state.

EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-scan register cells at output balls are used to apply a test vector, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST, the output driver is turned on, and the PRELOAD data is driven onto the output balls. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. High-Z The High-Z instruction causes the boundary scan register to be connected between the TDI and TDO. This places all RLDRAM outputs into a High-Z state. CLAMP When the CLAMP instruction is loaded into the instruction register, the data driven by the output balls are determined from the values held in the boundary scan register. SAMPLE/PRELOAD When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 50 MHz, while the RLDRAM clock operates significantly faster. Because there is a large difference between the clock frequencies, it is possible that during the capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the boundary scan register will capture the correct value of a signal, the RLDRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The RLDRAM clock input might not be captured PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 71 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/ PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the shift-DR state. This places the boundary scan register between the TDI and TDO balls. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a shift-DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved for Future Use The remaining instructions are not implemented but are reserved for future use. Do not use these instructions.

Figure 45: JTAG Operation – Loading Instruction Code and Shifting Out Data TMS TDI TCK TDO T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TAP CONTROLLER STATE Test-Logic- Reset Run-Test Idle Select-DR- Capture-IR Shift-IR SCAN Select-IRSCAN
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Shift-IR Exit 1-IR Pause-IR Pause-IR
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
8-bit instruction code TRANSITIONING DATA DON’T CARE TMS TDI TCK TDO TAP CONTROLLER STATE T10 T11 T12 T13 T14 T15 T16 T17 T18 Exit 2-IR Select-DRScan Capture-DR Shift-DR Shift-DR Exit1-DR Update-DR Run-Test Update-IR Idle
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
n-bit register between TDI and TDO
T19 Run-Test Idle

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 72 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) Figure 46: TAP Timing Notes: 1. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. Table 23: TAP Input AC Logic Levels +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted Description Symbol Min Max Units Input high (logic 1) voltage VIH VREF + 0.3 – V Input low (logic 0) voltage VIL – VREF - 0.3 V Notes: 1. All voltages referenced to VSS (GND). Table 24: TAP AC Electrical Characteristics +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V Description Symbol Min Max Units Clock Clock cycle time tTHTH 20 ns Clock frequency fTF 50 MHz Clock HIGH time tTHTL 10 ns Clock LOW time tTLTH 10 ns TDI/TDO times TCK LOW to TDO unknown tTLOX 0 ns TCK LOW to TDO valid tTLOV 10 ns TDI valid to TCK HIGH tDVTH 5 ns TCK HIGH to TDI invalid tTHDX 5 ns Setup times TMS setup tMVTH 5 ns Capture setup tCS 5 ns Hold times TMS hold tTHMX 5 ns Capture hold tCH 5 ns DON’T CARE tTHTL tTLTH tTHTH tMVTH tTHMX tDVTH tTHDX tTLOX tTLOV UNDEFINED Test clock (TCK) Test mode select (TMS) Test data-in (TDI) Test data-out (TDO) T1 T2 T3 T4 T5 T6

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 73 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot = VIH(AC) ≤ VDD + 0.7V for t ≤ tCK/2; undershoot = VIL(AC) ≥ –0.5V for t ≤ tCK/2; during normal operation, VDDQ must not exceed VDD. Table 25: TAP DC Electrical Characteristics and Operating Conditions +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted Description Condition Symbol Min Max Units Notes Input high (logic 1) voltage VIH VREF + 0.15 VDD + 0.3 V 1, 2 Input low (logic 0) voltage VIL VSSQ - 0.3 VREF - 0.15 V 1, 2 Input leakage current 0V ≤ VIN ≤ VDD ILI –5.0 5.0 μA Output leakage current Output disabled, 0V ≤ VIN ≤ VDDQ ILO –5.0 5.0 μA Output low voltage IOLC = 100μA VOL1 0.2 V 1 Output low voltage IOLT = 2mA VOL2 0.4 V 1 Output high voltage |IOHC| = 100μA VOH1 VDDQ - 0.2 V 1 Output high voltage |IOHT| = 2mA VOH2 VDDQ - 0.4 V 1 Table 26: Identification Register Definitions Instruction Field All Devices Description Revision number (31:28) abcd ab = die revision cd = 00 for x9, 01 for x18, 10 for x36 Device ID (27:12) 00jkidef10100111 def = 000 for 288Mb, 001 for 576Mb i = 0 for common I/O, 1 for separate I/O jk = 01 for RLDRAM II, 00 for RLDRAM Micron JEDEC ID code (11:1) 00000101100 Allows unique identification of RLDRAM vendor ID register presence indicator (0) 1 Indicates the presence of an ID register Table 27: Scan Register Sizes Register Name Bit Size Instruction 8 Bypass 1 ID 32 Boundary scan 113

PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 74 ©2003 Micron Technology, Inc. All rights reserved. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) Table 28: Instruction Codes Instruction Code Description Extest 0000 0000 Captures I/O ring contents; Places the boundary scan register between TDI and TDO; This operation does not affect RLDRAM operations ID code 0010 0001 Loads the ID register with the vendor ID code and places the register between TDI and TDO; This operation does not affect RLDRAM operations Sample/preload 0000 0101 Captures I/O ring contents; Places the boundary scan register between TDI and TDO Clamp 0000 0111 Selects the bypass register to be connected between TDI and TDO; Data driven by output balls are determined from values held in the boundary scan register High-Z 0000 0011 Selects the bypass register to be connected between TDI and TDO; All outputs are forced into High-Z Bypass 1111 1111 Places the bypass register between TDI and TDO; This operation does not affect RLDRAM operations

Table 29: Boundary Scan (Exit) Order Bit# Ball Bit# Ball Bit# Ball 1 K1 39 R11 77 C11
2 K2 40 R11 78 C11
3 L2 41 P11 79 C10
4 L1 42 P11 80 C10
5 M1 43 P10 81 B11
6 M3 44 P10 82 B11
7 M2 45 N11 83 B10
8 N1 46 N11 84 B10
9 P1 47 N10 85 B3
10 N3 48 N10 86 B3
11 N3 49 P12 87 B2
12 N2 50 N12 88 B2
13 N2 51 M11 89 C3
14 P3 52 M10 90 C3
15 P3 53 M12 91 C2
16 P2 54 L12 92 C2
17 P2 55 L11 93 D3
18 R2 56 K11 94 D3
19 R3 57 K12 95 D2
20 T2 58 J12 96 D2
21 T2 59 J11 97 E2
22 T3 60 H11 98 E2
23 T3 61 H12 99 E3
24 U2 62 G12 100 E3
25 U2 63 G10 101 F2
26 U3 64 G11 102 F2
27 U3 65 E12 103 F3
28 V2 66 F12 104 F3
29 U10 67 F10 105 E1
30 U10 68 F10 106 F1
31 U11 69 F11 107 G2
32 U11 70 F11 108 G3
® 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. RLDRAM is a trademark of Qimonda AG in various countries, and is used by Micron Technology, Inc. under license from Qimonda. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II IEEE 1149.1 Serial Boundary Scan (JTAG) PDF: 09005aef80a41b59/Source: 09005aef809f284b Micron Technology, Inc., reserves the right to change products or specifications without notice. 288Mb_RLDRAM_II_CIO.Core.fm - Rev B 5/08 EN 75 ©2003 Micron Technology, Inc. All rights reserved. 33 T10 71 E10 109 G1 34 T10 72 E10 110 H1 35 T11 73 E11 111 H2 36 T11 74 E11 112 J2 37 R10 75 D11 113 J1 38 R10 76 D10 – –

x59 blog | cheats4 | mt5 blog | link 2 | link 3